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RZR040P01
Data Sheet
200
Ta=25°C
100
V DS = -6V
5
Ta=25°C
150
Pulsed
Pulsed
Ta= -25°C
Ta=25°C
Ta=75°C
V DD = -6V
4 I D = -4.0A
R G =10 ?
Pulsed
3
100
I D = -2.0A
I D = -4.0A
10
Ta=125°C
2
50
1
0
1
0
0
5
10
0.1
1
10
0
5
10
15
20
25
30
35
GATE-SOURCE VOLTAGE : -V GS [V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN CURRENT : -I D [A]
Fig.11 Forward Transfer Admittance
vs. Drain Current
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
Ta=25°C
f=1MHz
V GS =0V
1000
Ciss
100
td(off)
tf
1000
td(on)
Crss
10
100
Coss
1
tr
Ta=25°C V DD = -6V
V GS =-4.5V R G =10 ?
Pulsed
0.01
0.1
1
10
100
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : -V DS [V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Measurement circuits
DRAIN-CURRENT : -I D [A]
Fig.14 Switching 　 Characteristics
90%
V GS
I D
R L
V DS
V GS
Pulse Width
10%
50%
50%
D.U.T.
10%
10%
R G
V DD
V DS
t d(on)
90%
tr
t d(off)
90%
tf
t on
t off
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
I G(Const.)
V GS
I D
D.U.T.
R L
V DS
V G
V GS
Q g
R G
V DD
Q gs
Q gd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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c 2009 ROHM Co., Ltd. All rights reserved.
4/4
2009.06 - Rev.A
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